BC556 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC556/BC557/BC558 TRANSISTOR (PNP)
TO-92
FEATURES
z High Voltage
z Complement to BC546/BC547/BC548
1. COLLECTOR
2. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
Parameter
Value
Unit
Collector-Base Voltage BC556
-80
V_CBO
BC557
-50
V
BC558
-30
-65
V_CEO
Collector-Emitter Voltage
-45
V
-30
V_EBO
I_C
P_C
T_J
T_stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-5
V
-100
mA
625
mW
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
BC556
-80
BC557 V_CBO I_C= -100μA, I_E=0
-50
BC558
-30
Collector-emitter breakdown voltage
BC556
-65
BC557 V_CEO I_C= -2mA , I_B=0
-45
BC558
-30
Emitter-base breakdown voltage
V_EBO I_E= -100μA, I_C=0
-5
Collector cut-off current
Collector cut-off current
Emitter cut-off current
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
V_CB=- 70 V, I_E=0
I_CBO V_CB= -45 V, I_E=0
V_CB= -25V, I_E=0
V_CE= -60 V, I_B=0
I_CEO V_CE= -40 V, I_B=0
V_CE= -25 V, I_B=0
I_EBO V_EB= -5 V, I_C=0
DC current gain
BC556
BC557
BC558
BC557A
BC556B/BC557B/BC558B
BC557C
120
120
120
h_FE
V_CE=-5V, I_C= -2mA
120
180
420
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
800
800
800
220
460
800
Collector-emitter saturation voltage
V_CE(sat) I_C=-100mA, I_B= -5mA
-0.65 V
Base-emitter saturation voltage
V_BE(sat) I_C= -100mA, I_B=-5mA
-1
V
Transition frequency
f_T
V_CE= -5V, I_C= -10mA
f = 100MHz
150
MHz
A,May,2011