BC546 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC546/BC547/BC548 TRANSISTOR (NPN)
TO-92
FEATURES
z High Voltage
z Complement to BC556,BC557,BC558
1. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. BASE
Symbol
Parameter
Value Unit
Collector-Base Voltage BC546
80
V_CBO
BC547 50
V
BC548 30
3. EMITTER
V_CEO
V_EBO
I_C
P_D
T_J
T_stg
Collector-Emitter Voltage BC546
65
BC547 45
V
BC548 30
Emitter-Base Voltage
Collector Current -Continuous
6
V
100
mA
Total Device Dissipation
Junction Temperature
Storage Temperature
625
mW
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC546
BC547
BC548
Collector-emitter breakdown voltage
BC546
BC547
BC548
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546A/BC547A/BC548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Test conditions
I_C= 100μA , I_E=0
I_C= 1mA , I_B=0
I_E= 10μA, I_C=0
V_CB= 70V, I_E=0
V_CB= 50 V, I_E=0
V_CB= 30V, I_E=0
V_CE= 60 V, I_B=0
V_CE= 45 V, I_B=0
V_CE= 30 V, I_B=0
V_EB= 5V, I_C=0
V_CE=5V, I_C= 2mA
I_C=100mA, I_B= 5mA
I_C= 100mA, I_B=5mA
V_CE= 5V, I_C= 10mA
f = 100MHz
Min Max Unit
80
50
V
30
65
45
V
30
6
V
0.1
μA
0.1
μA
0.1
μA
110 800
110 800
110 800
110 220
200 450
420 800
0.3
V
1.1
V
150
MHz
A,May,2011