3P4MH Datasheet, PDF (1/1 Pages) NEC – THYRISTORS

TIGER ELECTRONIC CO.,LTD
Product specification
Triacs sensitive gate
3P4MH 3P6MH
GENERAL DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage capability
and high thermal cycling performance. Typical applications include
motor control, industrial domestic lighting, heating and staticand
switching.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbo
l
Typ
3P4MH
3P6MH
Unit
Repetitive peak off-state
voltages
VV_DRRRMM
400
600
V
RMS on-state current
I_T(RMS)
4.7
A
Non-repetitive peak
on-state current
I_TSM
65
A
Max. Operating Junction
Temperature
T_j
110
o_C
Storage Temperature
T_stg
-45~150
o_C
TO-202
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Repetitive peak off-state voltages
VV_DRRRMM
—
400
~600
—
V
RMS on-state current
On-state voltage
Holding current
Gate trigger current
Gate trigger voltage
I_T(RMS) full sine wave; T_mb ≤107 ^oC
—
V_TM I_T=10A
—
I_H
V_DM = 20 V; I_TM = 10 A
—
I_GT V_D = 6.0 V; RL = 100 Ω
—
V_GT V_D = 6.0 V; RL = 100 Ω
—
4.7
—
A
—
1.6 V
1.0 5.0 mA
—
0.2 ^mA
—
0.8 V