2SD799 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE(DARINGTON PPOWER)

TIGER ELECTRONIC CO.,LTD
Silicon NPN Power Transistors
2SD799
DESCRIPTION
With TO-220 package
High DC current gain
DARLINGTON
APPLICATIONS
Igniter applications
High voltage switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
600
400
5
6
1
30
150
-55~150
UNIT
V
V
V
A
A
W