2SD560 Datasheet, PDF (1/1 Pages) Fujitsu Component Limited. – SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP, 100 VOLT)

TIGER ELECTRONIC CO.,LTD
NPN Silicon Power Ttransistors
Product specification
2SD560
DESCRIPTION
The 2SD560 is a mold power transistor developed for lowfrequency
power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Collector-Base Voltage
V_CBO
150
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
100 V
7.0 V
5.0 A
0.5 A
30 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
I_CBO V_CB=100V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=7.0V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Saturation Voltage
V_CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
I_C=30mA, I_B=0
V_CE=2.0V, I_C=3.0A
V_CE=2.0V, I_C=5.0A
I_C=3.0A,I_B=3.0mA
I_C=3.0A,I_B=3.0mA
Current Gain Bandwidth Product
f_T
V_CE=10V,I_C=500mA
Min.
—
—
100
2000
500
—
—
4.0
Typ. Max. Unit
— 1.0 uA
—
10 uA
—
—
V
— 15000
—
—
— 1.5 V
— 2.0 V
—
— MHz