2SD401A Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(2A,150V,25W)

TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Ttransistors
Product specification
2SB546A / 2SD401A
( Ta = 25 ^OC)
DESCRIPTION
The 2SB546A and 2SD401A are high voltage triple diffused silicon transistors,
These devices are designed for use in line-operated color TV vertical defiection of
complementary symmetry circuit,
The 2SB546A and 2SD401A are complementary transistors, consisting of straight leads
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Symbol Value Unit
V_CBO
200
V
V_CEO
150
V
V_EBO
5
V
I_C
2.0
A
I_C(peak)
3.0
A
P_tot
30 W
T_j
150 ^oC
T_stg -55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICST SEMICONDUCTOR CO., LTD
Parameter
Symbol Test Conditions
Collector Cutoff Current
I_CBO V_CB=150V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=4.0V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Collector capacitance
Transition Frequency
V_CEO
h_FE(1)
V_CE(sat)
C_C
f_T
I_C=10mA, I_B=0
V_CE=10V, I_C=400mA
I_C=500mA,I_B=50mA
V_CB=10V,f=1.0MHz, I_E=0
V_CE=10V,I_C=400mA
Min.
—
—
150
40
—
—
—
Typ.
—
—
—
—
—
75/45
7.0
Max.
50
50
—
—
2.0
—
—
Unit
uA
uA
V
V
pF
MHz