2SD288 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – NPN EPITAXIAL SILICON TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER)

TIGER ELECTRONIC CO.,LTD
Silicon NPN Power Ttransistors
Product specification
2SD288
APPLICATIONS
.Low frequency power amplifier
.Power regulator applications
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
80 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
55 V
6.0 V
3.0 A
0.3 A
25 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
I_CEO V_CB=55V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=6.0V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
V_CEO I_C=10mA, I_B=0
h_FE V_CE=5V, I_C=0.5A
Collector-Emitter Saturation Voltage V_CE(sat) I_C=1.0A, I_B=100mA
Base-Emitter Saturation Voltage
V_BE(sat) I_C=1.0A, I_B=100mA
Min. Typ. Max. Unit
—
—
10 uA
—
—
10 uA
55
—
—
V
40
— 240
—
—
1.0 V
—
—
1.5 V
‹ h_FE classifications
R
O
Y
40-80
70-140 120-240