 English |
|
|
|
|
|
|
|
| 2SC945 Datasheet, PDF (1/1 Pages) NEC – NPN Silicon Transistor(AF amplifier and low speed switching) | |||
| |||
|
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC945 TRANSISTOR (NPN )
TO-92
FEATURE
z Excellent hFE linearity
z Low noise
z Complementary to A733
1.EMITTER
2.COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
60
50
5
150
400
125
-55-125
Unit
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=1mA , IE=0
60
V
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IC=100μA , IB=0
IE=100 μA, IC=0
VCB=60V, IE=0
VCE=45V, IB=0
50
V
5
V
0.1
μA
0.1
μA
IEBO
VEB=5V ,IC=0
0.1
μA
hFE(1)
VCE=6V , IC=1mA
70
700
hFE(2)
VCE=6V , IC=0.1mA
40
VCE(sat) IC=100mA, IB=10mA
0.3
V
VBE(sat) IC=100mA, IB=10mA
1
V
fT
VCE=6V,IC=10mA,f=30MHz 200
MHz
Cob
VCB=10V,IE=0,f=1MHz
VCE=6V,IC=0.1mA
NF
RG=10kâ¦,f=1MHz
3.0
pF
10
dB
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
A,Jan,2011
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese