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2SC5150 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR GIHG RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
TIGER ELECTRONIC CO.,LTD
Silicon NPN Triple Diffused Planar Ttransistors
Product specification
2SC5150
Application:
Horizontal deflection output for high resolution
display ,color TV.
High speed switching applications
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
1200 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
700 V
6.0 V
7.0 A
3.5 A
50 W
150 oC
-55~150 oC
TO-3P(H)IS
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
ICBO VCB = 1000V, IE = 0
IEBO VEB = 6.0V, IC =0
VCEO IC = 2.0mA, IB = 0
hFE(1) VCE = 5.0V, IC = 1.0A
hFE(2) VCE = 5.0V, IC = 5.0A
VCE(sat) IC = 5.0A, IB = 1.2A
VBE(sat) IC = 5.0A, IB = 1.2A
fT
VCE = 10V, IC = 0.1A
Min.
—
—
700
10
5
—
—
—
Typ. Max. Unit
— 5.0 uA
— 5.0 uA
—
—
V
—
30
—
—
— 1.5 V
— 1.3 V
2.0 — MHz