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2SC5148 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)
TIGER ELECTRONIC CO.,LTD
Silicon NPN Triple Diffused Planar Ttransistors
Product specification
2SC5148
Application:
Horizontal deflection output for high resolution
display ,color TV.
High speed switching applications
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
1200 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
700 V
6.0 V
6.0 A
3.0 A
50 W
150 oC
-55~150 oC
TO-3P(H)IS
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
ICBO VCB = 1000V, IE = 0
IEBO VEB = 6.0V, IC =0
VCEO IC = 2.0mA, IB = 0
hFE(1) VCE = 5.0V, IC = 1.0A
hFE(2) VCE = 5.0V, IC = 5.0A
VCE(sat) IC = 5.0A, IB = 1.2A
VBE(sat) IC = 5.0A, IB = 1.2A
fT
VCE = 10V, IC = 0.1A
Min.
—
—
700
10
5
—
—
—
Typ. Max. Unit
— 5.0 uA
— 5.0 uA
—
—
V
—
30
—
—
— 2.0 V
— 1.5 V
2.0 — MHz