2SC3834 Datasheet, PDF (1/1 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)

TIGER ELECTRONIC CO.,LTD
Product specification
Silicon NPN Triple Diffused Planar Transistor
2SC3834
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
200
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
120 V
8.0 V
7.0 A
3.0 A
50 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CBO V_CB=200V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=8V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V_CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
I_C=50mA, I_B=0
V_CE=4V, I_C=0.3A
V_CE=4V, I_C=3.0A
I_C=3.0A,I_B=300mA
I_C=3.0A,I_B=300mA
Current Gain Bandwidth Product
f_T
V_CE=12V,I_C=500mA
Min.
120
100
70
10
Typ. Max. Unit
0.1 mA
0.1 mA
V
220
0.5 V
1.2 V
MHz