2SC2383 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (COLOR TV VERT. DEFLECTION, CLASS B SOUND OUTPUT APPLICATIONS)

TIGER ELECTRONIC CO.,LTD
1. EMITTER
2. COLLECTOR
Features
23
1
3. BASE
— High voltage: V_CEO=160V
— Large continuous collector current capability
— Complementary to 2SA1013
2SC2383
TO-92L Transistor (NPN)
TO-92L
0.000
0.300
1.600
3.700
4.100
4.000
4.700
5.100
0.350
0.450
1.280
1.580
7.800
8.200
0.600
0.800
0.350
0.550
13.800
14.200
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
1.270 TYP
2.440
2.640
Dimensions in inches and (millimeters)
Value
160
160
6
1
0.75
150
-55 to +150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)_CBO
V(BR)_CEO
V(BR)_EBO
I_CBO
I_CER
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE
f_T
I_C= 100μA , I_E=0
I_C= 10mA, I_B=0
I_E= 10μA, I_C=0
V_CB=150V, I_E=0
V_CB=150V,R_EB= 10MΩ
V_EB=6V, I_C=0
V_CE=5V, I_C=200mA
V_CE=5V, I_C=10mA
I_C=500m A, I_B=50mA
I_C=5mA, V_CE= 5V
V_CE=5V, I_C=200mA
160
V
160
V
6
V
1
μA
10
μA
1
μA
60
320
40
1
V
0.75
V
20
MHz
CLASSIFICATION OF h_FE1
Rank
R
O
Y
Range
60-120
100-200
160-320