2SC2236 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

TIGER ELECTRONIC CO.,LTD
TO-92L Plastic-Encapsulate Transistors
2SC2236 TRANSISTOR (NPN)
FEATURE
Complementary to 2SA966 and 3 Watts Output Applications.
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
5
1.5
0.9
150
-55~+150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)_CBO I_C= 1mA , I_E=0
30
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0
30
Emitter-base breakdown voltage
V(BR)_EBO I_E= 1mA, I_C=0
5
Collector cut-off current
I_CBO
V_CB=30V , I_E=0
Emitter cut-off current
I_EBO
V_EB=5V , I_C=0
DC current gain
h_FE
V_CE=2 V, I_C= 500mA
100
Collector-emitter saturation voltage
V_CE(sat) I_C= 1.5 A, I_B= 0.03A
Base-emitter voltage
V_BE
I_C= 500 mA, V_CE= 2V
Transition frequency
f_T
V_CE= 2V, I_C= 500mA
Typ Max
0.1
0.1
320
2
1
120
Collector output Capacitance
C_ob
V_CB= 10V, I_E= 0,f=1MHz
30
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
O
100-200
Y
160-320
A,Jun,2011