2SC1959 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

TIGER ELECTRONIC CO.,LTD
2SC1959
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2SC1959 is designed for audio frequency Low power amplifier
applications.
Features
• Excellent hFE Linearity.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ....................................................................................... 150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 500 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 35 V
VCEO Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
35
-
BVCEO
30
-
BVEB
5
-
ICBO
-
-
IEBO
-
-
VCE(sat)
-
-
VBE(on)
-
-
hFE1
120
-
hFE2
40
-
fT
-
300
Cob
-
7.0
Max.
-
-
-
100
100
0.25
1.0
240
-
-
-
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=20mA, VCE=6V
IE=0, VCB=6V, f=1MHZ
TIGER ELECTRONIC CO.,LTD