2SC1815 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

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2SC1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2SC1815 is designed for use in driver stage of AF amplifier
general purpose amplification.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 400 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 50 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ........................................................................................................ 150 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
50
-
BVCEO
50
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
VCE(sat)
-
-
VBE(sat)
-
-
hFE1
120
-
hFE2
25
-
fT
80
-
Cob
-
-
Max.
-
-
-
100
100
250
1
700
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification of hFE1
Rank
Range
Y
120-240
GR
200-400
BL
350-700
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