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2SC1674 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – TO-92 Plastic-Encapsulated Transistors
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1674 TRANSISTOR (NPN)
FEATURES
z High current gain bandwidth product fT=600MHz(Typ.),
z High power gain GPE=22dB at f=100MHz
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
20
V
TO-92
1.EMITTER
2 COLLECTOR
3. BASE
VEBO
IC
Emitter-Base Voltage
Collector Current
4
V
20
mA
PC Collector Power dissipation
250
mW
TJ Junction Temperature
Tstg Storage Temperature
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Test conditions
V(BR)CBO IC= 100μA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE= 100μA,IC=0
ICBO
VCB= 30V, IE=0
IEBO
VEB=3V, IC=0
hFE
VCE=6 V, IC= 1mA
VCE(sat)
IC=10mA, IB= 1mA
VBE(ON)
VCE=6V, IC= 1mA
MIN MAX UNIT
30
V
20
V
4
V
0.1
μA
0.1
μA
40
180
0.3
V
0.65 0.77
V
Transition frequency
fT
VCE=6 V, IC= 1mA
400
MHz
Collector output capacitance
Cob
VCE=6V,IE=0, f =1MHz
1.3
pF
CLASSIFICATION OF hFE
Rank
Range
Y
40-80
GR
60-120
BL
90-180