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| 2SC1383 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) | |||
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TIGER ELECTRONIC CO.,LTD
TO-92L Plastic-Encapsulate Transistors
2SC1383
2SC1384
TRANSISTOR (NPN)
TO-92L
FEATURES
z Low collector to emitter saturation voltage VCE(sat).
z Complementary pair with 2SA0683 and 2SA0684.
1.EMITTER
2.COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
2SC1383 2SC1384
Units
3.BASE
VCBO
Collector-Base Voltage
30
60
V
VCEO
Collector-Emitter Voltage
25
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current âContinuous
1
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage 2SC1383
30
V(BR)CBO
IC=10μA ,IE=0
2SC1384
60
Collector-emitter breakdown voltage 2SC1383
25
V(BR)CEO
IC=2mA , IB=0
2SC1384
50
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
5
Collector cut-off current
ICBO
VCB=20V, IE=0
DC current gain
hFE(1)
hFE(2)
VCE=10V, IC=500mA
85
VCE=5V, IC=1A
50
Collector-emitter saturation voltage
VCE(sat)
IC=500m A,IB=50mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
123
MAX UNIT
V
V
V
0.1
μA
340
0.4
V
1.2
V
Transition frequency
fT
VCE=10V,IC=50mA
200
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
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