2SB834 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

TIGER ELECTRONIC CO.,LTD
2SD880 / 2SB834
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
60
V
7
V
3.0 A
0.5 A
30 W
150 ^oC
-55~150 ^oC
TO-220
ELECTRICAL CHARACTERISTICSB(ATGa = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CEO V_CB=60V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=7V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V_CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
I_C=50mA, I_B=0
V_CE=4V, I_C=1.0A
V_CE=4V, I_C=3.0A
I_C=3A,I_B=300mA
V_CE=5V,I_C=0.5A
V_CE=5V,I_C=500mA
Min.
60
25
10
3
Typ. Max. Unit
0.1 mA
0.1 mA
V
50
1.0 V
1.0 V
MHz