2SB817 Datasheet, PDF(1/1 Page) Mospec Semiconductor – POWER TRANSISTORS(12A,140V,100W)

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2SB817 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,140V,100W)

TIGER ELECTRONIC CO.,LTD

Complementary Silicon Power Ttransistors

Product specification

2SD1047 / 2SB817

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Symbol Value Unit

Collector-Base Voltage

VCBO

160 V

Collector-Emitter Voltage

VCEO

140 V

Emitter-Base Voltage

VEBO

6.0 V

Collector Current

12 A

Base Current

1.2 A

Total Dissipation at

Max. Operating Junction Temperature

Storage Temperature

Ptot

100 W

150 oC

Tstg -55~150 oC

TO-3PN

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter

Symbol Test Conditions

Collector Cut-off Current

ICEO VCB=140V, IE=0

Emitter Cut-off Current

IEBO VEB=6V, IC=0

Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0

DC Current Gain

hFE1

hFE2

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=6.0A

Collector-Emitter Saturation Voltage VCE(sat) IC=5.0A,IB=0.5A

Base-Emitter Voltage

VBE VCE=5.0V,IC=1.0A

Current Gain Bandwidth Product

fT VCE=5.0V,IC=1.0A

Collector Output Capacitance

COB VCB=-10V, IE=0, f=1MHz

Note : hfe1 Classification D: 60~120, E: 100~200

Min.

140

Typ.

300

Max. Unit

10 uA

200

2.5 V

1.5 V

â MHz