2SB772 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON POWER TRANSISTOR

TIGER ELECTRONIC CO.,LTD
2SD882 / 2SB772
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
V_CBO
40
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
30
V
5
V
3.0 A
0.3 A
10 W
150 ^oC
-55~150 ^oC
TO-126
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
I_CEO V_CB=30V, I_E=0
Emitter Cut-off Current
I_EBO V_EB=3V, I_C=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V_CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
I_C=10mA, I_B=0
V_CE=2V, I_C=20mA
V_CE=2V, I_C=1.0A
I_C=2A,I_B=200mA
I_C=2A,I_B=200mA
V_CE=5V,I_C=100mA
Min.
30
30
60
Typ.
150
160
0.3
1.0
90
Max. Unit
0.01 mA
0.01 mA
V
400
0.5 V
2.0 V
MHz