2SB1151 Datasheet, PDF (1/1 Pages) NEC – Low Collector Saturation Voltage

TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Ttransistors
Product specification
2SD1691 / 2SB1151
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7.0 V
Collector Current
IC
5.0 A
Collector Peak Current
IC(peak)
8.0
A
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Ptot
20 W
Tj
150 ^oC
Tstg -55~150 ^oC
TO-126
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cutoff Current
ICBO VCB=50V, IE=0
Emitter Cut-off Current
IEBO VEB=7.0V, IC=0
Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0
DC Current Gain
hFE(1)
hFE(2)
VCE=1.0V, IC=0.1A
VCE=1.0V, IC=2.0A
hFE(3) VCE=1.0V, IC=5.0A
Collector-Emitter Saturation Voltage VCE(sat) IC=2.0A,IB=0.2A
Base - Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=0.2A
Storage Time
tstg IC=2.0A, IB1=-IB2=0.2A
hfe(2): M 100~200, L 160~320, K 200~400
Min.
—
—
60
60
100
50
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—
—
Typ.
—
—
—
—
—
—
—
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Max. Unit
10 uA
10 uA
—
V
—
400
—
0.3 V
1.2 V
2.5 us
EAST SEMICONDUCTOR CO., LTD
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