2SA733 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON TRANSISTOR

TIGER ELECTRONIC CO.,LTD
2SA733
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The 2SA733 is designed for use in driver stage of AF amplifier
applications..
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 50 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 100 mA
IB Base Current ............................................................................................................... 20 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
50
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
VCE(sat)
-
0.18
VBE(on)
0.55
0.62
hFE
90
200
fT
100
180
Cob
-
4.5
Max.
-
-
-
0.1
0.1
0.3
0.7
600
-
6
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=10V, f=1MHz, IE=0
Classification Of hFE1
Rank
Range
R
Q
90-180 135-270
P
200-400
K
300-600
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