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| 2SA1020 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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TIGER ELECTRONIC CO.,LTD
TO-92L Plastic-Encapsulate Transistors
2SA1020 TRANSISTOR (PNP)
TO-92L
FEATURES
Power amplifier applications
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-2
A
PC
Collector Power Dissipation
900
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC =-100µA,IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO IC =-10mA,IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA,IC=0
-5
Collector cut-off current
ICBO
VCB=-50V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE(1) VCE=-2V,IC=-0.5A
70
hFE(2) VCE=-2V,IC=-1.5A
40
Collector-emitter saturation voltage
VCE(sat) IC=-1A,IB=-50mA
Base-emitter saturation voltage
VBE(sat) IC=-1A,IB=-50mA
Transition frequency
fT
VCE=-2V,IC=-500mA
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Turn-on time
Storage time
ton
ts
VCC=-30V,IB1=-IB2=-0.05A, IC=-1A
Fall time
tf
TYP
100
40
0.1
1
0.1
MAX
-1
-1
240
UNIT
V
V
V
µA
µA
-0.5
V
-1.2
V
MHz
pF
μs
μs
μs
CLASSIFICATION OF hFE(1)
Rank
Range
O
70-140
Y
120-240
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