2SA1015 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

TIGER ELECTRONIC CO.,LTD
2SA1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The 2SA1015 is designed for use in driver stage of AF amplifier and
general purpose amplification.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 400 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 50 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 150 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
50
BVCEO
50
BVEBO
5
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
120
hFE2
25
fT
80
Cob
Max.
100
100
300
1.1
700
7.0
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification Of hFE1
Rank
Range
Y
120-240
GR
200-400
BL
350-700
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