2N6520 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

TIGER ELECTRONIC CO.,LTD
2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The 2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage.
• Low Collector-Emitter Saturation Voltage.
• The 2N6520 is complementary to 2N6517.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................... -55~+150°C
Junction Temperature ................................................................................................. +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................. 350 V
VEBO Emitter to Base Voltage........................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
350
-
BVCEO
350
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
VCE(SAT)1
-
-
VCE(SAT)2
-
-
VCE(SAT)3
-
-
VCE(SAT)4
-
-
VBE(ON)
-
-
VBE(SAT)1
-
-
VBE(SAT)2
-
-
VBE(SAT)3
-
-
hFE1
20
-
hFE2
30
-
hFE3
30
-
hFE4
20
-
hFE5
15
-
fT
40
-
Cob
-
-
Max.
-
-
-
50
50
0.30
0.35
0.50
1.00
2
0.75
0.85
0.90
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=250V, IE=0
VEB=4V, IC=0
IC=10mA IB=1mA
IC=20mA IB=2mA
IC=30mA IB=3mA
IC=50mA IB=5mA
IC=100mA VCE=10V
IC=10mA IB=1mA
IC=20mA IB=2mA
IC=30mA IB=3mA
VCE=10V IC=1mA
VCE=10V IC=10mA
VCE=10V IC=30mA
VCE=10V IC=50mA
VCE=10V IC=100mA
IC=10mA VCE=20V f=20MHz
VCB=20V f=1MHz IE=0
TIGER ELECTRONIC CO.,LTD