2N6517 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

TIGER ELECTRONIC CO.,LTD
2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2N6517 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage.
• Low Collector-Emitter Saturation Voltage.
• The 2N6517 is complementary to 2N6520.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................... -55~+150°C
Junction Temperature ................................................................................................. +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................. 350 V
VEBO Emitter to Base Voltage........................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VCE(sat)3
VCE(sat)4
VBE(on)
VBE(sat)1
VBE(sat)2
VBE(sat)3
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
Typ.
350
-
350
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
30
-
30
-
20
-
15
-
40
-
-
-
Max.
-
-
-
50
50
0.30
0.35
0.50
1.00
2
0.75
0.85
0.90
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=100mA, VCE=10V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
VCE=10V, IC=1mA
VCE=10V, IC=10m
VCE=10V, IC=30mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, VCE=20V, f=20MHz
VCB=20V, f=1MHz, IE=0
TIGER ELECTRONIC CO.,LTD