2N5551 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

TIGER ELECTRONIC CO.,LTD
2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2N5551 is designed for amplifier transistor.
Features
• Complements to PNP Type 2N5401.
• High Collector-Emitter Breakdown Voltage. VCEO>160V (@IC=1mA)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 180 V
VCEO Collector to Emitter Voltage .................................................................................... 160 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
180
-
BVCEO
160
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
-
-
VBE(sat)2
-
-
hFE1
>80
-
hFE2
80
160
hFE3
50
-
fT
100
-
Cob
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1.0mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification of hFE2
Rank
Range
A
80-200
N
100-250
C
160-400
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