2N3904 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

TIGER ELECTRONIC CO.,LTD
2N3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2N3904 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 6.0 V
IC Collector Current ....................................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6.0
-
ICEX
-
-
VCE(sat)1
-
-
VCE(sat)2
-
-
VBE(sat)1
650
-
VBE(sat)2
-
-
hFE1
40
-
hFE2
70
-
hFE3
100
-
hFE4
60
-
hFE5
30
-
fT
300
-
Cob
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4.0
Unit
V
V
V
nA
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=30V, VBE=3V
IB=1mA, IC=10mA
IB=5mA, IC=50mA
IB=1mA, IC=10mA
IB=5mA, IC=50mA
VCE=1V, IC=100uA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, VCE=20V, f=100MHz
VCB=5V, f=1MHz, IE=0
TIGER ELECTRONIC CO.,LTD