1SS193 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

TIGER ELECTRONIC CO.,LTD
SOT-23 Plastic-Encapsulate Diodes
1SS193 Switching DIODES
FEATURES
y Low forward voltage
: V_F(3)=0.9V(typ.)
y Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: F3
SOT-23
1. ANODE
2. N.C.
3. CATHODE
Maximum Ratings @T_A=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
85
V
DC Blocking Voltage
V_R
80
V
Forward Continuous Current
I_FM
300
mA
Average Rectified Output Current
I_O
100
mA
Power Dissipation
P_D
150
mW
Junction temperature
T_J
125
℃
Storage temperature range
T_STG
-55-125
℃
Electrical Characteristics @T_A=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V _(BR)R
V_F1
V_F2
V_F3
I_R1
I_R2
C_T
t _rr
Min.
80
Typ.
0.60
0.72
0.90
0.9
1.6
Max. Unit
V
V
V
1.2
V
0.1
uA
0.5
uA
3.0
pF
4.0
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R