1SS187 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

TIGER ELECTRONIC CO.,LTD
SOT-23 Plastic-Encapsulate Diodes
1SS187 Switching Diode
FEATURES
y Low forward voltage
y Fast reverse recovery time
MARKING: D3·
SOT-23
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V_RM
V_R
I_FM
I_O
P_D
T_J
T_STG
Limit
85
80
300
100
150
150
-55~+150
Unit
V
V
mA
mA
mW
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min Typ Max Unit
Conditions
V _(BR)
80
V I_R=100μA
V_F1
0.61
V I_F=1mA
V_F2
0.74
V I_F=10mA
V_F3
0.92 1.2
V I_F=100mA
I_R1
0.1
uA V_R=30V
I_R2
0.5
uA V_R=80V
C_T
2.2
4.0
pF V_R=0,f=1MHz
t _rr
1.6
4.0
ns I_F=I_R=10mA,I_rr=0.1×I_R
A,Jun,2011