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1N60P Datasheet, PDF (1/2 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE
TIGER ELECTRONIC CO.,LTD
           
1N60
1N60P
Features
• High Reliability
• Low Reverse Current and Low Forward Voltage
• Marking : Cathode band and type number
• Moisture Sensitivity: Level 1 per J-STD-020C
Schottky Barrier
Rectifier
Maximum Ratings
• Storage &Operating JunctionTemperature: -65℃ to +125℃
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter Symbol Type Value Test Condition
Repetitive
1N60 40V
Peak Reverse
Voltage
VRRM
1N60P
45V
Average
Forward
Current
IF(AV)
1N60
1N60P
30mA
50mA
Ta = 25℃
Ta = 25℃
Peak Forward
Surge Current
IFSM
1N60 150mA tp≦1s
1N60P 500mA tp≦1s
Junction
Ambient
RthJA
On PC board
250K/W 50mm×50mm
×1.6mm
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE