SI3590DV Datasheet, PDF (8/13 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si3590DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P _DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 87 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72032.
www.vishay.com
8
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09