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SISA10DN Datasheet, PDF (6/13 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET
New Product
SiSA10DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
NNNoootteteesss:::
0.1
0.1
0.05
0.02
PPPDDDMMM
tt1t11
tt2t22
111...DDDuuuttytyyCCCyyycccllelee,,,DDD===
tt1t11
tt2t22
222...PPPeeerrrUUUnnniitittBBBaaassseee===RRRtththhJJJAAA===877100°°°CCC///WWW
333...TTTJJJMMM---TTTAAA===PPPDDDMMMZZZtththhJJJAAA((t(t)t))
Single Pulse
0.01
444...SSSuuurrfrfafaaccceeeMMMooouuunnntteteeddd
0.0001
0.001
0.01
0.1
1
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63819.
www.vishay.com
For technical support, please contact: pmostechsupport@vishay.com
Document Number: 63819
6
S12-0806-Rev. A, 16-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000