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| SIR880DP Datasheet, PDF (6/13 Pages) Vishay Siliconix – N-Channel 80 V (D-S) MOSFET 100 % UIS Tested | |||
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New Product
SiR880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 54 °C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65702.
www.vishay.com
6
Document Number: 65702
S10-2683-Rev. B, 22-Nov-10
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