SIE878DF Datasheet, PDF (5/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

New Product
SiE878DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
25
50
20
Package Limited
40
15
30
10
20
5
10
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
www.vishay.com
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