SI7308DN Datasheet, PDF (5/13 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
16
25
14
20
12
10
15
8
6
10
4
5
2
0
0
25
50
75
100
125
150
0
T_C - Case Temperature (°C)
Current Derating*
Si7308DN
Vishay Siliconix
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating
100
10
T_A =
L · I_D
BV - V_DD
1
10^-6
10^-5
10^-4
10^-3
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73419
S-83051-Rev. B, 29-Dec-08
www.vishay.com
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