SI7220DN Datasheet, PDF (5/12 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
Si7220DN
Vishay Siliconix
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Notes:
The minimum creepage between D1 and D2 for this 100 V device is 0.2 mm. Please see PowerPAK 1212-8 outline drawing, document # 71656,
for more information.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73117.
Document Number: 73117
S-83052-Rev. C, 29-Dec-08
www.vishay.com
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