SIJ478DP Datasheet, PDF (4/10 Pages) Vishay Telefunken – N-Channel 80 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.050
SiJ478DP
Vishay Siliconix
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.040
I_D = 20 A
0.030
0.020
0.010
T_J = 25 °C
T_J = 125 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.5
500
0.2
400
- 0.1
- 0.4
300
I_D = 5 mA
200
- 0.7
I_D = 250 μA
100
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1000
100
10
I_DM Limited
I_D Limited
100 μs
1 ms
1
Limited by R_DS(on)*
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
BVDSS Limited
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
100 ms
1s
10 s
DC
100
Safe Operating Area, Junction-to-Ambient
S13-1386-Rev. A, 17-Jun-13
4
Document Number: 62868
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