SIHF530S Datasheet, PDF (4/9 Pages) Vishay Telefunken – Power MOSFET

IRF530S, SiHF530S
Vishay Siliconix
1400
1200
1000
800
600
400
200
0
10⁰
91020_05
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
C_rss
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹ 175 °C
25 °C
10⁰
0.4
91020_07
V_GS = 0 V
0.8
1.2
1.6
2.0
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 _{ID = 14 A}
16
12
V_DS = 80 V
V_DS = 50 V
V_DS = 20 V
8
4
0
0
91020_06
For test circuit
see figure 13
5
10
15
20
25
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10³
5
2
10²
5
2
10
5
2
1
5
2
0.1
0.1 ²
Operation in this area limited
by R_DS(on)
10 µs
100 µs
1 ms
10 ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
5
2
1
5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91020_08
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91020
S11-1046-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000