SI7942DP Datasheet, PDF (4/12 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si7942DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
100
0.4
80
I_D = 250 μA
0.0
60
- 0.4
40
- 0.8
20
- 1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
Time (s)
Single Pulse Power
100 600
2
1
Duty Cycle = 0.5
100
Limited R_DS(on)
I_DM
Limited
10
P(t) = 0.0001
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
BVDSS Limited
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 60 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 2}
10 ^{- 1}
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72118
S09-0227-Rev. C, 09-Feb-09