SI7102DN Datasheet, PDF (4/14 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

Si7102DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
2.0
V_GS = 5 thru 1.5 V
50
1.6
40
1.2
30
0.8
20
10
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
0.0
0.0
0.0040
5000
0.0038
0.0036
V_GS = 2.5 V
4000
3000
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0034
0.0032
V_GS = 4.5 V
2000
C_rss
1000
C_oss
0.0030
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8.0
I_D = 10 A
6.4
4.8
3.2
V_DS = 6 V
V_DS = 4 V
V_DS = 8 V
1.6
0
0.0
1.6
3.2
4.8
6.4
8.0
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 15 A
1.3
1.1
V_GS = 2.5 V
V_GS = 4.5 V
0.9
0.0
0
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4
15
30
45
60
75
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74250
S-83044-Rev. B, 22-Dec-08