SI5468DC Datasheet, PDF (4/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si5468DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.08
0.06
10
0.04
T_J = 25 °C
T_J = 150 °C
0.02
I_D = 6.8 A
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
- 50 - 25
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
50
40
30
20
10
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
1 ms
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4
1
10 ms
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
100 ms
1s
10 s
100 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69072
S09-0316-Rev. A, 02-Mar-09