SI5440DC Datasheet, PDF (4/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
0.04
I_D = 9.1 A
Si5440DC
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0.03
10
0.02
0.01
T_J = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.2
2.0
I_D = 250 µA
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
50
40
30
20
10
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
100 µs
1
0.1
T_A = 25 °C
Single Pulse
1 ms
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-2143-Rev. B, 07-Sep-15
4
Document Number: 69056
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000