SI5424DC Datasheet, PDF (4/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si5424DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
T_A = 150 °C
1
0.1
T_A = 25 °C
0.01
0.06
0.05
I_D = 4.8 A
0.04
0.03
T_A = 125 °C
0.02
T_A = 25 °C
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.0
1.8
1.6
I_D = 250 µA
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
50
40
30
20
10
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
BVDSS Limited
0.01
T_A = 25 C
Single Pulse
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73776
S13-0297-Rev. C, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000