SI4816BD Datasheet, PDF (4/13 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
V_DS = 15 V
5
I_D = 6.8 A
4
3
2
1
1.6
V_GS = 10 V
I_D = 6.8 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Gate Charge
40
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
T_J = 150 °C
10
T_J = 25 °C
0.04
0.03
I_D = 6.8 A
0.02
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature (°C)
Threshold Voltage
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09