SI1428EDH Datasheet, PDF (4/12 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
Si1428EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
1.6
1.5
V_GS = 10 V; I_D = 3.7 A
V_GS = 4.5 V; I_D = 3.7 A
1.4
V_GS = 2.5 V; I_D = 1.5 A
1.3
100
T_J = 150 °C
10
1.2
1.1
T_J = 25 °C
1.0
1
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Normalized On-Resistance vs. Junction Temperature
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.10
1.2
I_D = 3.7 A
1.1
0.08
1.0
0.06
T_J = 125 °C
0.9
I_D = 250 μA
0.8
0.04
T_J = 25 °C
0.7
0.02
0.6
0
0.0
2.0
4.0
6.0
8.0
10.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
30
100
Limited by R_DS(on)*
25
10
20
100 μs
15
10
5
0
0.001 0.01 0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100 ms
1s
10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 67825
4
S11-0861-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000