SIS426DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
5
V_GS = 10 V thru 4 V
56
4
SiS426DN
Vishay Siliconix
42
3
V_GS = 3 V
T_C = 25 °C
28
2
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0060
0.0054
0.0048
V_GS = 4.5 V
1
0
0
2000
1600
1200
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0042
0.0036
V_GS = 10 V
0.0030
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 5 V
V_DS = 10 V
6
V_DS = 15 V
4
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
800
C_oss
400
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68799
www.vishay.com
S12-0214-Rev. C, 30-Jan-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000