SIRA02DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
V_GS = 10 V thru 4 V
80
8
SiRA02DP
Vishay Siliconix
60
40
V_GS = 3 V
20
V_GS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0025
0.0023
0.0021
V_GS = 4.5 V
0.0019
0.0017
V_GS = 10 V
0.0015
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
4
V_DS = 20 V
2
0
0
16
32
48
64
80
Q_g - Total Gate Charge (nC)
Gate Charge
6
T_C = 25 °C
4
2 _{TC = 125 °C}
T_C = - 55 °C
0
0.0
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
7000
C_iss
5600
4200
C_oss
2800
1400
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 15 A
1.5
V_GS = 10 V
1.3
V_GS = 4.5 V
1.1
0.9
0.7
- 50
- 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63773
For technical questions, contact: [e-mail]
www.vishay.com
S12-3075-Rev. B, 24-Dec-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000