SI7994DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si7994DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
V_GS = 10 thru 4 V
50
8
40
30
20
10
0
0.0
V_GS = 3 V
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
T_C = 125 °C
4
T_C = 25 °C
2
T_C = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.007
5000
0.006
0.005
0.004
V_GS = 4.5 V
V_GS = 10 V
0.003
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 15 V
6
V_DS = 24 V
4000
C_iss
3000
2000
1000
C_oss
0 ^Crss
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 20 A
1.4
V_GS = 10 V
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69974
S-80895-Rev. B, 21-Apr-08
www.vishay.com
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