SI5406CDC Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
V_GS = 5 thru 1.5 V
16
4
Si5406CDC
Vishay Siliconix
T_C = - 55 °C
12
3
T_C = 125 °C
8
2
4
0
0.0
0.030
V_GS = 1 V
V_GS = 0.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.026
1
T_C = 25 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
1200
C_iss
0.022
0.018
0.014
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.010
0
4
8
12
16
20
I_D - Drain Current (A)
On Resistance vs. Drain Current
8
I_D = 8.6 A
6
V_DS = 6 V
V_DS = 9.6 V
4
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68609
S-80795-Rev. A, 14-Apr-08
900
600
C_oss
300
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 6.5 A
1.4
V_GS = 10 V, 4.5 V, 1.8V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3